Silicon Carbide (SiC) power devices deliver faster switching and improved thermal performance compared to silicon IGBTs and MOSFETs. Accurate visibility into SiC switching signals is key to making the right design decisions. Increasing design margins and overdesigning will only drive costs up and bring performance down. Using the right measurement techniques can make all the difference. This application note will answer many of the questions that a power system designer must consider as they shift to SiC.
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