Inarguably, GaN power semiconductors are a hot topic in power electronics. Two transistor variations prevail today: normally-off d-mode GaN and e-mode GaN.
When confronted with the choice, the debate at times inexplicably leans toward e-mode. In reality, normally-off d-mode GaN proves to be a fundamentally superior platform in performance, reliability, versatility, manufacturability, and practical application. The reasoning lies in the normally-off d-mode’s ability to capitalize on the inherent advantages of the GaN material.
Download this paper for a tutorial outlining the superior benefits of normally-off d-mode versus e-mode GaN.
